진공증착장비(SPUTTER / EVAPORATOR / CVD)
진공증착장비 Images
MAGNETRON SPUTTERING SYSTEM
| LAY-OUT | ITEM | DESCRIPTION |
|---|---|---|
 |
System Composition | Process Module + Load-lock(OPTION) |
| Substrate Size | 2~6inch Si Wafer 1Set | |
| Gun Size | 2~16inch Magnetron | |
| Deposition Direction | Up or Downward | |
| Substrate Temperature | ~Max. 500℃ | |
| Bias Unit | DC Bias Unit | |
| Sputtering Source | DC Power : ~1KW @ Noise Filter RF Power : ~3KW @ Auto Matching |
|
| Substrate Treatment | Load-lock Chamber Plasma Treatment Unit(OPTION) |
SPUTTERING SYSTEM
| LAY-OUT | ITEM | DESCRIPTION |
|---|---|---|
 |
System Composition | Process Module + Load-lock |
| Substrate Size | 12inch Si Wafer 1Set | |
| Gun Size | 16inch Magnetron | |
| Deposition Direction | Up or Downward | |
| Substrate Temperature | ~500℃ | |
| Sputtering Source | DC Power : ~5KW @ Pulsed | |
| Substrate Treatment | Load-lock Chamber Plasma Treatment Unit(OPTION) Heating unit(OPTION) |
E-Beam & Thermal Evaporating System Images
THERMAL EVAPORATING SYSTEM
| LAY-OUT | ITEM | DESCRIPTION |
|---|---|---|
 |
System Composition | Process Module + Load-lock(OPTION) |
| Substrate Size | 6inch Wafer 1Set | |
| Deposition Direction | Upward | |
| Substrate Temperature | ~Max. 500℃ | |
| Boat | ~4EA |
E-BEAM EVAPORATING SYSTEM
| LAY-OUT | ITEM | DESCRIPTION |
|---|---|---|
 |
System Composition | Process Module + Load-lock(OPTION) |
| Substrate Size | 6inch Wafer 1Set | |
| Deposition Direction | Upward | |
| Substrate Temperature | ~Max. 500℃ | |
| E-Beam Source | DC Power : ~15KW |
Chemical Vapor Deposition System Images
INDUCTIVE COUPLING PLASMA-CVD SYSTEM
| LAY-OUT | ITEM | DESCRIPTION |
|---|---|---|
 |
System Composition | Process Module + Load-lock(OPTION) |
| Substrate Size | 12inch Wafer 1Set | |
| Deposition Direction | Upward | |
| Substrate Temperature | ~Max. 900℃ | |
| Plasma Source | RF Power Supply |
PLASMA ENHANCED CVD SYSTEM
| LAY-OUT | ITEM | DESCRIPTION |
|---|---|---|
 |
System Composition | Process Module + Load-lock(OPTION) |
| Substrate Size | ~6inch Wafer 1Set | |
| Deposition Direction | Downward | |
| Substrate Temperature | ~Max. 500℃ | |
| Plasma Source | RF Power : ~1KW @ Auto Matching |
THERMAL CVD SYSTEM
| LAY-OUT | ITEM | DESCRIPTION |
|---|---|---|
 |
System Composition | Process Module + Load-lock(OPTION) |
| Substrate Size | ~6inch Wafer 1Set | |
| Deposition Direction | Downward | |
| Substrate Temperature | ~Max. 1100℃ | |
| Plasma Source | RF Power : ~1KW @ Auto Matching |
